TDDB characterization of BST capacitors exhibiting bimodal Weibull distributions

Author

Lin, H. ; Bouyssou, E. ; Ventura, L.

Author_Institution

STMicroelectron., Tours, France

fYear

2011

fDate

16-20 Oct. 2011

Firstpage

87

Lastpage

89

Abstract

BST thin-film capacitors breakdown have been studied as a function of applied voltage and temperature. This paper deals with a bimodal behaviour observed from Time Dependent Dielectric Breakdown (TDDB) experiments. This double population makes it difficult to assess properly the components reliability. We show that these two populations are related to two intrinsic and distinct failures. Through an extensive study of leakage current conduction mechanisms, we exhibit that the Poole-Frenkel model can be used for both populations with two distinct trap heights of 0.6 and 0.9 eV directly related to this reliability behaviour.

Keywords

Weibull distribution; barium compounds; circuit reliability; electric breakdown; failure analysis; strontium compounds; thin film capacitors; BST; BST thin-film capacitors breakdown; Poole-Frenkel model; TDDB characterization; TDDB experiments; bimodal Weibull distributions; component reliability; distinct failure; electron volt energy 0.6 eV; electron volt energy 0.9 eV; intrinsic failure; leakage current conduction mechanisms; time dependent dielectric breakdown; Capacitors; Electric breakdown; Leakage current; Reliability; Stress; Temperature measurement; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4577-0113-9

Type

conf

DOI

10.1109/IIRW.2011.6142595

Filename

6142595