• DocumentCode
    3198493
  • Title

    A new degradation mechanism of gate oxide reliability due to "extrinsic" responses of Qbd along rough "bird´s-beak" frontline

  • Author

    Sheng, Lieyi ; Gerlach, Jeff ; Glines, Eddie

  • Author_Institution
    ON Semicond., Pocatello, ID, USA
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    98
  • Lastpage
    100
  • Abstract
    The roughness of "bird\´s-beak" frontline prior to gate oxidation has been revealed for the first time to degrade gate oxide reliability in TDDB. This new mechanism identifies the "extrinsic" Qbd responses to electrical fields. The restorations of intrinsic Qbd have been realized by post-fabrication anneals or process improvement.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; CMOS process; TDDB; bird-beak frontline; degradation mechanism; electrical fields; extrinsic responses; gate oxide reliability; post-fabrication anneals; process improvement; Annealing; Correlation; Degradation; Electric breakdown; Logic gates; Oxidation; Reliability; "bird´s-beak"; Gate oxide reliability; degradation mechanism; fontline roughness; intrinsic and "extrinsic" Qbd;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4577-0113-9
  • Type

    conf

  • DOI
    10.1109/IIRW.2011.6142598
  • Filename
    6142598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3198493