• DocumentCode
    3200252
  • Title

    3D Modeling of Concentrator III-V Multi-Junction Solar Cells

  • Author

    Baudrit, Mathieu ; Algora, Carlos

  • Author_Institution
    Inst. de Energia Solar, Univ. Politecnica de Madrid
  • Volume
    1
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    826
  • Lastpage
    829
  • Abstract
    Concentration based on III-V solar cells is one of the most promising technologies to reduce cost of PV electricity. To achieve high efficiency making a better use of the solar spectrum and under very high concentration, multijunction solar cells are explored at the IES-UPM. To give a real understanding of all the phenomena occurring inside these devices, the development of a reliable theoretical model is essential. In this paper we present the first results obtained in our laboratory simulating lattice-matched GaInP/GaAs dual junction solar cells. To achieve these results we numerically analyze the complete structure including the tunnel junction
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor heterojunctions; solar cells; solar energy concentrators; 3D modeling; GaInP-GaAs; IES-UPM; PV electricity; concentrator III-V multijunction solar cells; simulating lattice-matched semiconductor dual junction solar cells; solar spectrum; tunnel junction; Analytical models; Gallium arsenide; III-V semiconductor materials; Laboratories; Lighting; Metallization; Photovoltaic cells; Predictive models; Radiative recombination; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279584
  • Filename
    4059757