Enhancement of a-Si:H solar cell characteristics by hydrogen treatment at p/i interface using photo-CVD method

Author

Jang, Jae-Hoon ; Lim, Koeng-Su

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

fYear

1996

fDate

13-17 May 1996

Firstpage

1089

Lastpage

1091

Abstract

The authors propose hydrogen treatment at the p/i interface, using the mercury-sensitized photo-CVD method, as an effective technique to improve the characteristics of a-Si:H solar cells. The conversion efficiency increases by 19.3% compared to the no-hydrogen treatment case when the hydrogen treatment time is 20 minutes and the flow rate is 100 sccm. It was found that the hydrogen treatment time and hydrogen flow rate are very important factors for effective hydrogenation of the p/i interface and consequently improving the cell performance

Keywords

CVD coatings; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogen; p-n junctions; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; Si:H; a-Si:H solar cells; characteristics enhancement; conversion efficiency; flow rate; hydrogen treatment; hydrogenation; p/i interface; photo-CVD method; solar cell performance; treatment time; Buffer layers; Fabrication; Glass; Hydrogen; Passivation; Photonic band gap; Photovoltaic cells; Plasma properties; Short circuit currents; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564320

Filename

564320