Optimal CAD MESFETs frequency multipliers with and without feedback

Author

Guo, C. ; Ngoya, E. ; Quere, R. ; Camiade, M. ; Obregon, J.

Author_Institution

Limoges Univ., France

fYear

1988

fDate

25-27 May 1988

Firstpage

1115

Abstract

A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<>

Keywords

Schottky gate field effect transistors; circuit CAD; frequency multipliers; optimisation; solid-state microwave circuits; solid-state microwave devices; 10 to 40 GHz; EHF; MESFETs frequency multipliers; MM-wave; SHF; circuit optimisation; feedback; frequency doublers; millimeter-wave frequencies; optimal frequency multiplier; optimal operating conditions; optimum bias voltages; optimum load impedances; Circuit topology; Feedback circuits; Frequency; Impedance; MESFETs; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Network topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22226

Filename

22226