• DocumentCode
    3202342
  • Title

    Carrier lifetime in Ge+ implanted SiGe HBTs structures

  • Author

    Mitrovic, I.Z. ; Buiu, O. ; Hall, S. ; Ward, P.J.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
  • Volume
    2
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    487
  • Abstract
    This paper reports on carrier lifetime in Ge+ implanted Si/Si1-xGex/Si structures extracted from capacitance-transient responses of test MOS capacitors. The emphasis is put on the calculation of effective carrier lifetime in Ge+ implanted regions based on the refined value of the intrinsic carrier density/bandgap due to implanted germanium.
  • Keywords
    Ge-Si alloys; carrier lifetime; energy gap; germanium; heterojunction bipolar transistors; interface states; ion implantation; silicon; Ge+ implanted SiGe HBTs structures; Si/Si1-xGex/Si structures; capacitance-transient responses; carrier lifetime; Capacitance; Charge carrier lifetime; Circuit testing; Germanium silicon alloys; Heterojunction bipolar transistors; MOS capacitors; Plasma measurements; Plasma temperature; Radio frequency; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314869
  • Filename
    1314869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202342