Full Field Stress Measurements in Thin Silicon Sheet

Author

Li, F. ; Garcia, V. ; Danyluk, S.

Author_Institution

Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

1

fYear

2006

fDate

38838

Firstpage

1245

Lastpage

1248

Abstract

A full field near infrared polariscope has been designed and built for determination of in-plane residual stresses in thin multicrystalline silicon wafers. The technical issues that have been addressed are: wafer size (greater than 4 in times 4 in), wafer thickness (down to 100 mum), crystalline anisotropy, stress calibration and optical inaccuracies. Using this system, the in-plane residual stresses in thin edge-defined growth (EFG), cast and string ribbon wafers are compared

Keywords

elemental semiconductors; internal stresses; polarimetry; semiconductor thin films; silicon; stress measurement; Si; crystalline anisotropy; full field near infrared polariscope; full field stress measurements; in-plane residual stresses; stress calibration; string ribbon wafers; thin edge-defined growth; thin multicrystalline silicon wafers; thin silicon sheet; Birefringence; Image edge detection; Lenses; Optical filters; Optical polarization; Optical retarders; Optical sensors; Residual stresses; Silicon; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279425

Filename

4059863