• DocumentCode
    3202551
  • Title

    Electrically pumped random lasing from ZnO materials

  • Author

    Ma, Xiangyang ; Chen, Peiliang ; Tian, Ye ; Li, Dongshen ; Yang, Deren

  • Author_Institution
    State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    335
  • Lastpage
    337
  • Abstract
    In this presentation summary, the realization of electrically pumped random lasing from ZnO materials by means of metal-insulator-semiconductor structure is introduced. Moreover, the mechanism we have proposed for the electrically pumped random lasing is elucidated.
  • Keywords
    II-VI semiconductors; MIS structures; electron beam pumping; semiconductor lasers; wide band gap semiconductors; zinc compounds; ZnO; electrically pumped random lasing; metal-insulator-semiconductor structure; zinc oxide materials; Films; Optical scattering; Pump lasers; Stimulated emission; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643335
  • Filename
    5643335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202551