DocumentCode
3202720
Title
1.1 to 1.6 µm silicon light emitting diodes and optical gain
Author
Homewood, K.P. ; Lourenço, M.A. ; Gwilliam, R.M.
Author_Institution
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
302
Lastpage
304
Abstract
We report silicon LEDs showing light emission from 1.1 to 1.6 μm and demonstrate optical gain by incorporating optically active impurities. Nano-engineering enables room temperature operation. As one exemplar, we show that erbium, with local strain engineering provides useful optical emission and gain at 1.5 μm.
Keywords
elemental semiconductors; impurities; integrated optics; light emitting diodes; nanotechnology; silicon; Si; light emission; light emitting diodes; local strain engineering; nano-engineering; optical gain; optically active impurities; room temperature operation; silicon LED; temperature 293 K to 298 K; wavelength 1.1 mum to 1.6 mum; Erbium; Light emitting diodes; Optical amplifiers; Optical mixing; Optical pumping; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643347
Filename
5643347
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