DocumentCode
3203272
Title
High efficieny and long-term stability of nanocrystalline silicon based devices
Author
Marconi, A. ; Anopchenko, A. ; Puker, G. ; Pavesi, L.
Author_Institution
Dept. of Phys., Univ. of Trento, Povo, Italy
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
219
Lastpage
221
Abstract
High efficiency of silicon nanocrystal based devices is shown through energy-band gap engineering of the nanocrystal ensemble. By using bipolar tunneling, improved electrical and opto-electronic stabilities after long storage time and under aging experiments are demonstrated.
Keywords
elemental semiconductors; energy gap; nanostructured materials; nanotechnology; semiconductor device reliability; silicon; storage; tunnelling; Si; bipolar tunneling; electrical stability; energy band gap engineering; long storage; long term stability; nanocrystal ensemble; nanocrystalline silicon based device; opto-electronic stabilities; Electroluminescence; Light emitting diodes; Nanocrystals; Nonhomogeneous media; Silicon; Temperature measurement; Voltage measurement; Band Gap Engineering; Device Stability; High Efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643375
Filename
5643375
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