DocumentCode
3203326
Title
Mach-Zehnder silicon modulator on bulk silicon substrate; toward DRAM optical interface
Author
Shin, D.J. ; Lee, K.H. ; Ji, H.-C. ; Na, K.W. ; Kim, S.G. ; Bok, J.K. ; You, Y.S. ; Kim, S.S. ; Joe, I.S. ; Suh, S.D. ; Pyo, J. ; Shin, Y.H. ; Ha, K.H. ; Park, Y.D. ; Chung, C.H.
Author_Institution
Image Archit. Lab., Samsung Electron., Yongin, South Korea
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
210
Lastpage
212
Abstract
We present a Mach-Zehnder silicon modulator fabricated on a bulk silicon substrate featuring active length of 200 μm, modulation speed up to 5 Gb/s, power consumption of 2 pJ/bit, and extinction ratio of 10 dB.
Keywords
DRAM chips; Mach-Zehnder interferometers; elemental semiconductors; optical design techniques; optical modulation; silicon; substrates; DRAM optical interface; Mach-Zehnder silicon modulator; Si; bulk silicon substrate; power consumption; Optical device fabrication; Optical imaging; Optical interconnections; Optical modulation; Optical waveguides; Silicon; optical interconnect; optical modulation; silicon photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643376
Filename
5643376
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