DocumentCode
3203367
Title
Electromigration lifetime prediction of RF-PA transistors
Author
Radivojevic, Z. ; Peng, W.
Author_Institution
Nokia Res. Center, Helsinki, Finland
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
685
Abstract
This work represents reliability investigation of LDMOS gold plating RF-PA transistors implemented in a base-station environment. Purpose of this work is to obtain knowledge for electromigration reliability assessment of the RF-PA and create an adequate method to predict the lifetime of Au/Si thin stripe implemented in structure of the RF-PA. Therefore, a procedure how to evaluate electromigration failure risks by combining microstructural analysis, lifetime acceleration experiments and adequate modelling is described.
Keywords
CMOS integrated circuits; electromigration; gold; power MOSFET; power amplifiers; radiofrequency amplifiers; semiconductor device models; Au; Au/Si thin stripe; LDMOS Au plating; RF-PA transistors; adequate modelling; base-station environment; electromigration failure risks; electromigration lifetime prediction; lifetime acceleration; microstructural analysis; Current density; Electromigration; Equations; Gold; Integrated circuit interconnections; Integrated circuit reliability; Predictive models; Solid modeling; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314923
Filename
1314923
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