200 μm thick encapsulated amorphous silicon solar cells

Author

Crone, Brian ; Payne, Adam ; Wagner, Sigurd

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

1169

Lastpage

1172

Abstract

A 200 μm thick fully glass-encapsulated a-Si:H solar cell is demonstrated. The cell structure is 75 μm glass foil superstrate/a-Si,N:H diffusion barrier/specular ZnO:Al/a-Si:H pin solar cell/Al. The solar cell is encapsulated with 50 μm ethylene vinyl acetate (EVA) and another 75 μm glass foil. The current-voltage characteristics of a 0.24 cm² cell measured under AM1.5 (100 mW/cm²) light give V_OC=0.83 V, J_SC=11.1 mA/cm², and FF=0.61, for an initial efficiency of 5.6%

Keywords

amorphous semiconductors; elemental semiconductors; encapsulation; glass; hydrogen; polymer films; semiconductor device packaging; silicon; solar cells; 0.83 V; 200 mum; 5.6 percent; 50 mum; 75 mum; AM1.5; Si:H; SiN:H; ZnO:Al; a-Si,N:H diffusion barrier; a-Si:H pin solar cell; current-voltage characteristics; ethylene vinyl acetate; glass foil; glass foil superstrate; glass-encapsulated a-Si:H solar cell; specular ZnO:Al; Aluminum; Amorphous silicon; Circuits; Contacts; Current-voltage characteristics; Glass; Gold; Ovens; Photovoltaic cells; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564340

Filename

564340