• DocumentCode
    3203943
  • Title

    Enhanced electroluminescence from nc-Si/SiO2 pillar arrays using nanosphere lithography

  • Author

    Ma, Z.Y. ; Liu, G.Y. ; Xia, G.Y. ; Yan, M.Y. ; Jiang, X.F. ; Ling, T. ; Xu, L. ; Dong, H.P. ; Huang, X.F. ; Chen, K.J. ; Li, W. ; Feng, D.

  • Author_Institution
    Dept. of Phys., Nanjing Univ., Nanjing, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    114
  • Lastpage
    116
  • Abstract
    Intensive electroluminescence could be observed from nc-Si/SiO2 pillars. The electroluminescence intensity is increased by 30 times of magnitude compared to that of nc-Si/SiO2 multilayers. The enhancement of EL can be attributed to the improved extraction efficiency of emission light and the high carrier-injection efficiency.
  • Keywords
    electroluminescence; nanofabrication; nanolithography; nanophotonics; optical arrays; optical fabrication; optical multilayers; silicon; silicon compounds; Si-SiO2; electroluminescence intensity; high carrier-injection efficiency; light emission; multilayers; nanosphere lithography; nc-Si-SiO2 pillar arrays; Electroluminescence; Lithography; Morphology; Nanostructures; Nonhomogeneous media; Silicon; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643408
  • Filename
    5643408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203943