DocumentCode
3203996
Title
Upper limit for the amplifiable Stokes power in saturated silicon waveguide Raman amplifiers
Author
Renner, Hagen
Author_Institution
Tech. Univ. Hamburg-Harburg, Hamburg, Germany
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
108
Lastpage
110
Abstract
We derive upper limits for the amplifiable Stokes power in saturated silicon Raman amplifiers and the tolerable product of scattering-loss and FCA coefficients. Optimal pump conditions are given analytically and optimized amplifier designs are presented.
Keywords
Raman spectra; elemental semiconductors; optical fibre amplifiers; optical pumping; optical waveguides; silicon; Stokes power; free carrier absorption; scattering-loss; waveguide Raman amplifiers; Attenuation; Differential equations; Optimized production technology; Photonics; Raman scattering; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643410
Filename
5643410
Link To Document