DocumentCode
320419
Title
Recent progress in amorphous silicon alloy leading to 13% stable cell efficiency
Author
Yang, Jeffrey ; Banerjee, Arindam ; Glatfelter, Troy ; Sugiyama, Shuichiro ; Guha, Subhendu
Author_Institution
United Solar Syst. Corp., Troy, MI, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
563
Lastpage
568
Abstract
Significant progress has been made in amorphous silicon (a-Si) alloy solar cells using a spectral-splitting, triple-junction structure in which the bandgap of each component cell is designed to absorb a different portion of the solar spectrum. Key factors leading to the stable 13% active-area cell efficiency include: (i) using a high hydrogen dilution technique during the growth of the intrinsic layers, (ii) employing a bandgap profiling design for the a-SiGe alloy cells, (iii) incorporating appropriate current mismatch for component cells, (iv) developing microcrystalline doped layers for the tunnel junctions and the window layer, (v) enhancing the light trapping effect of the textured back reflector, and (vi) improving the performance of the top conducting oxide layer. These factors along with other developments relevant to the achievement of high efficiency cells are discussed
Keywords
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; p-n junctions; solar cells; 13 percent; Si; SiGe; a-SiGe alloy solar cells; bandgap; bandgap profiling design; current mismatch; high efficiency; high hydrogen dilution technique; intrinsic layers growth; light trapping effect enhancement; microcrystalline doped layers; spectral-splitting triple-junction structure; textured back reflector; top conducting oxide layer; tunnel junctions; window layer; Amorphous silicon; Hydrogen; Impurities; Laboratories; Lead; Manufacturing; Photovoltaic cells; Silicon alloys; Solar system; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654153
Filename
654153
Link To Document