• DocumentCode
    320419
  • Title

    Recent progress in amorphous silicon alloy leading to 13% stable cell efficiency

  • Author

    Yang, Jeffrey ; Banerjee, Arindam ; Glatfelter, Troy ; Sugiyama, Shuichiro ; Guha, Subhendu

  • Author_Institution
    United Solar Syst. Corp., Troy, MI, USA
  • fYear
    1997
  • fDate
    29 Sep-3 Oct 1997
  • Firstpage
    563
  • Lastpage
    568
  • Abstract
    Significant progress has been made in amorphous silicon (a-Si) alloy solar cells using a spectral-splitting, triple-junction structure in which the bandgap of each component cell is designed to absorb a different portion of the solar spectrum. Key factors leading to the stable 13% active-area cell efficiency include: (i) using a high hydrogen dilution technique during the growth of the intrinsic layers, (ii) employing a bandgap profiling design for the a-SiGe alloy cells, (iii) incorporating appropriate current mismatch for component cells, (iv) developing microcrystalline doped layers for the tunnel junctions and the window layer, (v) enhancing the light trapping effect of the textured back reflector, and (vi) improving the performance of the top conducting oxide layer. These factors along with other developments relevant to the achievement of high efficiency cells are discussed
  • Keywords
    Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; p-n junctions; solar cells; 13 percent; Si; SiGe; a-SiGe alloy solar cells; bandgap; bandgap profiling design; current mismatch; high efficiency; high hydrogen dilution technique; intrinsic layers growth; light trapping effect enhancement; microcrystalline doped layers; spectral-splitting triple-junction structure; textured back reflector; top conducting oxide layer; tunnel junctions; window layer; Amorphous silicon; Hydrogen; Impurities; Laboratories; Lead; Manufacturing; Photovoltaic cells; Silicon alloys; Solar system; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3767-0
  • Type

    conf

  • DOI
    10.1109/PVSC.1997.654153
  • Filename
    654153