Fast deposited microcrystalline silicon solar cells

Author

Torres, P. ; Meier, J.P. ; Kroll, U. ; Beck, N. ; Keppner, Herbert ; Shah, Aamer

Author_Institution

Inst. of Microtechnol., Neuchatel Univ.

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

711

Lastpage

714

Abstract

Microcrystalline silicon solar cells with AM 1.5 conversion efficiency above 5% have been deposited at deposition rates in excess of 10 Å/s. This is achieved by VHF-GD at an excitation frequency of 130 MHz. By increasing the plasma power at a dilution ratio of 7.5 % silane/(silane+hydrogen) there first appears a morphological transition from a-Si:H to μc-Si:H and then an increase in deposition rate. Crystallographic properties and solar cell efficiencies vary thereby in a significant manner

Keywords

elemental semiconductors; hydrogen; plasma CVD; plasma CVD coatings; semiconductor thin films; silicon; solar cells; μc-Si:H; 130 MHz; AM 1.5 conversion efficiency; Si solar cells; Si:H; VHF-GD; a-Si:H; crystallographic properties; deposition rate; dilution ratio; excitation frequency; fast deposited microcrystalline solar cells; morphological transition; plasma power; silane/(silane+hydrogen) ratio; solar cell efficiencies; Amorphous materials; Crystallography; Force measurement; Frequency; Photovoltaic cells; Photovoltaic systems; Plasma properties; Semiconductor thin films; Silicon; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654188

Filename

654188