Properties of Microcrystalline Silicon Prepared at High Growth Rate

Author

Kocka, J. ; Mates, T. ; Ledinský, M. ; Stuchlíková, H. ; Stuchlík, J. ; Fejfar, A.

Author_Institution

Inst. of Phys., Acad. of Sci. of the Czech Republic, Prague

Volume

2

fYear

2006

fDate

38838

Firstpage

1600

Lastpage

1603

Abstract

Silicon thin films were grown by PECVD at high-pressure (700 Pa), high-power (4-8 W/cm²) depletion regime using a multi-hole powered electrode. Series of samples were deposited varying hydrogen/silane ratio, plasma power and film thickness to study evolution of film structure and transport properties around a-Si:H/muc-Si:H transition. We suggest a simple figure-of-merit for the films based on alpha(1eV)/alpha(1.4eV) ratio from CPM, which correlates well with the values of ambipolar diffusion length measured by surface photovoltage method (SPV) perpendicular to the substrate, i.e., the direction of the photogenerated carriers collection in solar cells

Keywords

electrodes; elemental semiconductors; hydrogen; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; surface photovoltage; 700 Pa; PECVD; Si:H; ambipolar diffusion length; figure-of-merit; film structure; high pressure depletion method; microcrystalline silicon; multihole powered electrode; photogenerated carriers; plasma power; silicon thin films; solar cells; surface photovoltage method; Electrodes; Hydrogen; Length measurement; Photovoltaic cells; Plasma measurements; Plasma properties; Plasma transport processes; Semiconductor thin films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279792

Filename

4059958