MESFETs modelling for an optimum saturated class A MMIC power amplifier design

Author

Fortes, Fernando ; Rosario, Maria Jogo do ; Freire, Joao Costa

Author_Institution

Inst. de Telecommun., Inst. Superior Tecnico, Lisbon, Portugal

fYear

1997

fDate

2-5 Dec 1997

Firstpage

549

Abstract

This paper describes the modeling of a 0.5 μm gate length GaAs MESFET using different models (Tajima and Curtice Cubic) and different experimental characterization techniques (pulsed and continuous). The models characteristics are compared with experiments. Discussion on the best modeling approach for the design of saturated class A power amplifiers is presented. For this purpose we have designed and tested a 3 V bias, 100 mW output power at 2 GHz monolithic power amplifier. All matching and bias elements are on-chip. The matching networks topology and design take into account the fabrication dispersion

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; S-parameters; Schottky gate field effect transistors; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; microwave field effect transistors; semiconductor device models; 0.5 micron; 100 mW; 2 GHz; 3 V; Curtice Cubic model; GaAs; GaAs MESFET; MESFET modelling; MMIC power amplifier design; Tajima model; characterization techniques; monolithic power amplifier; onchip bias elements; onchip matching elements; optimum saturated class A design; Circuits; Foundries; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Power system modeling; Pulse amplifiers; Pulse measurements; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654600

Filename

654600