• DocumentCode
    3204893
  • Title

    Properties of Nano-Crystalline Silicon Films for Top Solar Cells

  • Author

    Iwasita, Shinya ; Inoue, Toshihisa ; Koga, Kazunori ; Shiratani, Masaharu ; Nunomura, Shota ; Kondo, Michio

  • Author_Institution
    Dept. of Electron., Kyushu Univ., Fukuoka
  • Volume
    2
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    1664
  • Lastpage
    1667
  • Abstract
    Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3times1015 cm-3 and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells
  • Keywords
    absorption coefficients; elemental semiconductors; nanostructured materials; nanotechnology; optical constants; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; Si; absorption coefficient; defect density; multihollow plasma CVD; nanocrystalline silicon films; optical band gap; solar cells; Absorption; Crystalline materials; Crystallization; Grain size; Inductors; Optical films; Photovoltaic cells; Semiconductor films; Silicon; Size control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279809
  • Filename
    4059975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3204893