DocumentCode
3205870
Title
Extension of QSSPC Lifetime Measurement to Germanium Samples
Author
Cornagliotti, E. ; Agostinelli, G. ; van der Heide, J. ; Posthuma, N.E. ; Beaucarne, G. ; Poortmans, J.
Author_Institution
IMEC, Leuven
Volume
2
fYear
2006
fDate
38838
Firstpage
1869
Lastpage
1871
Abstract
QSSPC (quasi-steady-state photo-conductance) is a well-known technique for lifetime measurement, but up to now its use has been limited to silicon. In this paper we describe a simple method to extend this technique to germanium samples. The significant differences between silicon and germanium are separately analyzed. For each of these differences the correction to be made is described. With this procedure the distinctive features that made this technique so successful and widespread are maintained
Keywords
carrier lifetime; elemental semiconductors; germanium; photoconductive cells; photoconductivity; semiconductor device testing; solar cells; Ge; QSSPC lifetime measurement; photovoltaic cells; quasisteady-state photo-conductance; solar cells; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Electron mobility; Germanium; Lifetime estimation; Lighting; Passivation; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279859
Filename
4060025
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