DocumentCode
3206232
Title
Linear operation of high-power millimeter-wave stacked-FET PAs in CMOS SOI
Author
Dabag, Hayg-Taniel ; Asbeck, Peter M. ; Buckwalter, James F.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
fYear
2012
fDate
5-8 Aug. 2012
Firstpage
686
Lastpage
689
Abstract
Stacked-FET PAs have emerged as a promising circuit technique for high-power CMOS PAs at millimeter-wave bands. Common-source (1-stack) and 3-stack PAs are realized in 45-nm CMOS SOI and compared at 45-GHz. The saturated output power increases from 10 dBm to more than 18 dBm respectively for 1- and 3-stack PAs. Compression and EVM/ACP measurements for QAM modulation are presented to discuss the linearization requirements of millimeter-wave stacked-FET PAs.
Keywords
field effect transistors; power amplifiers; CMOS SOI; QAM modulation; common source; high power CMOS PA; high power millimeter wave stacked FET PA; linear operation; linearization; millimeter wave band; CMOS integrated circuits; CMOS technology; FETs; Logic gates; Millimeter wave transistors; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location
Boise, ID
ISSN
1548-3746
Print_ISBN
978-1-4673-2526-4
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2012.6292113
Filename
6292113
Link To Document