DocumentCode
3206696
Title
High temperature simulation of 6H- and 4H-silicon carbide MOSFETs
Author
Shams, S.F. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1998
fDate
24-26 Apr 1998
Firstpage
271
Lastpage
274
Abstract
Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined
Keywords
digital simulation; power MOSFET; semiconductor device models; semiconductor materials; silicon compounds; ISE-TCAD device simulator; MOSFETs; SiC; channel lengths; high temperature simulation; vertical power DMOSFET; Aerospace engineering; Aerospace materials; Breakdown voltage; Computational modeling; Crystalline materials; MOSFETs; Poisson equations; Silicon carbide; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '98. Proceedings. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4391-3
Type
conf
DOI
10.1109/SECON.1998.673347
Filename
673347
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