EKV3 Parameter Extraction and Characterization of 90nm RF-CMOS Technology

Author

Yoshitomi, S. ; Bazigos, A. ; Bucher, M.

Author_Institution

Toshiba Corp., Tokyo

fYear

2007

fDate

21-23 June 2007

Firstpage

74

Lastpage

79

Abstract

EKV3 is a circuit-design-oriented compact MOSFET model for analog/RF IC design. The paper presents parameter extraction guidelines and modelling using EKV3 for TOSHIBA´s 90 nm RF-CMOS technology covering DC, CV and RF (S-parameter) and temperature scalability. RF verification was done by the use of multi-finger MOSFETs with many variations of gate length, width of unit fingers and number of fingers. A scalable RF model was successfully created. Extraction of RF parasitics and their scaling with RF layout is investigated. The EKV3 model successfully predicted high-frequency behaviour of 90 nm CMOS up to 20 GHz over a wide range of bias conditions.

Keywords

CMOS integrated circuits; integrated circuit design; radiofrequency integrated circuits; RF-CMOS technology; analog-RF IC design; circuit-design-oriented compact MOSFET model; multifinger MOSFET; parameter extraction; Analog integrated circuits; Fingers; Guidelines; Integrated circuit modeling; MOSFET circuits; Paper technology; Parameter extraction; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Compact modelling; EKV3 model; Parameter extraction; RF CMOS; RF parasitics; Scaling;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on

Conference_Location

Ciechocinek

Print_ISBN

83-922632-9-4

Electronic_ISBN

83-922632-9-4

Type

conf

DOI

10.1109/MIXDES.2007.4286123

Filename

4286123