• DocumentCode
    3211137
  • Title

    Preparation and characteristics of insulator layers for field emission display device

  • Author

    Huang, Jieke ; Chen, Jun ; Deng, S.Z. ; She, J.C. ; Xu, N.S.

  • Author_Institution
    Sun Yat-sen (Zhongshan) Univ., Guangzhou
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    206
  • Lastpage
    207
  • Abstract
    In this study, insulator layers prepared by e-beam evaporation were investigated. Attempts were made to prepare SiO2 and Al2O3 multi-layer stack structure to improve the dielectric property of the gate insulator layer prepared in large area. Insulator layers consisting of various composition and numbers of layers were prepared and their dielectric properties were compared.
  • Keywords
    alumina; dielectric properties; electron beam applications; evaporation; field emission displays; multilayers; silicon compounds; Al2O3; Al2O3 multi-layer stack structure; SiO2; SiO2 multi-layer stack structure; dielectric property; electron-beam evaporation; field emission display device; gate insulator layer; insulator layers; Aluminum oxide; Argon; Atomic force microscopy; Dielectric substrates; Dielectrics and electrical insulation; Electric breakdown; Flat panel displays; Indium tin oxide; Plasma temperature; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480997
  • Filename
    4480997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3211137