DocumentCode
3211486
Title
Influence of synthesis temperature on field emission properties of ZnO nanostructures
Author
Hou, Kai ; Lei, Wei ; Zhang, Xiaobing ; Li, Chi ; Yang, Xiaxi ; Qu, Ke
Author_Institution
Southeast Univ., Nanjing
fYear
2007
fDate
8-12 July 2007
Firstpage
249
Lastpage
250
Abstract
In this paper, we investigate the influence of synthesis temperature on the field emission properties of ZnO nanostructures. The ZnO nanostructures are synthesized by thermal oxidization zinc vapor method. Experimental results illustrate that the geometric morphology of ZnO nanostructures is strongly dependent upon growth temperature.
Keywords
II-VI semiconductors; field emission; heat treatment; nanostructured materials; oxidation; wide band gap semiconductors; zinc compounds; SEM; ZnO; field emission properties; geometric morphology; synthesis temperature; thermal oxidization zinc vapor method; zinc oxide nanostructures; Fabrication; Flat panel displays; Morphology; Nanowires; Photonic band gap; Power engineering and energy; Semiconductor nanostructures; Temperature dependence; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4481017
Filename
4481017
Link To Document