A novel 3V, 7 mA PHEMT GaAs active MMIC mixer/LNA for wireless applications

Author

Morkner, Henrik ; Frank, Michael ; Ingram, B.

Author_Institution

CMCD R&D, Hewlett-Packard, California, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

527

Abstract

A novel monolithic integrated active mixer/LNA utilizing advanced pseudomorphic GaAs FETs has been developed. RF frequency coverage is 900 MHz to 2400 MHz. The Mixer/LNA operates on a single 3 Volt supply at 7 mA. The mixer provides 4 dB conversion gain with a -10 dBm LO drive. The LNA provides a 1.6 dB noise figure and 14 dB gain. The die is packaged in the SSOP-16 plastic package to keep costs low. This is the only GaAs PHEMT active mixer/LNA known to provide such performance from such a small DC requirement.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; field effect MMIC; gallium arsenide; integrated circuit packaging; plastic packaging; 1.6 dB; 14 dB; 3 V; 4 dB; 7 mA; 900 to 2400 MHz; DC requirement; GaAs; PHEMT; RF frequency coverage; SSOP-16 plastic package; active MMIC mixer/LNA; conversion gain; pseudomorphic HEMTs; wireless applications; Costs; FETs; Gain; Gallium arsenide; MMICs; Mixers; Noise figure; PHEMTs; Plastic packaging; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406032

Filename

406032