Electromigration reliability enhancement of flip chip interconnects using Cu-doped SnPb solder

Author

Wu, J.D. ; Lee, C.W. ; Wu, S.Y. ; Li, Simon

Author_Institution

Stress & Reliability Lab., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan

fYear

2004

fDate

25-29 April 2004

Firstpage

565

Lastpage

566

Abstract

This work investigates electromigration resistance of three solder bump compositions, i.e. Sn63Pb37, SnPbCu, and SnPbNi. FCBGA with Cu-doped SnPb interconnects are observed to have 3.5-fold improvement in characteristic life (t63) than that of FCBGA using eutectic SnPb solder. On the other hand, significant reliability degradation (55%) is obtained when employing Ni-doped SnPb solder.

Keywords

ball grid arrays; copper alloys; electromigration; flip-chip devices; integrated circuit interconnections; integrated circuit metallisation; lead alloys; nickel alloys; semiconductor device reliability; soldering; tin alloys; Cu-doped SnPb solder; FCBGA; Sn63Pb37; Sn₆₃Pb₃₇; SnPbCu; SnPbNi; characteristic life; electromigration reliability enhancement; electromigration resistance; flip chip interconnects; reliability degradation; solder bump compositions; Anodes; Electric resistance; Electrical resistance measurement; Electromigration; Flip chip; Integrated circuit interconnections; Packaging; Semiconductor device reliability; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315391

Filename

1315391