• DocumentCode
    3212957
  • Title

    Electromigration performance enhancement of Cu interconnects with PVD Ta cap

  • Author

    Gajewski, Donald A. ; Meixner, Tom ; Feil, Bill ; Lien, Mitch ; Walls, James

  • Author_Institution
    Motorola SPS, Chandler, AZ, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    627
  • Lastpage
    628
  • Abstract
    We demonstrate an electromigration (EM) performance enhancement of Cu interconnects with PVD Ta cap. The activation energy is higher than for more conventional caps such as silicon nitride, yet uses the same tools and materials as the conventional barrier/seed process, as opposed to electroless Pd or CoWP deposition.
  • Keywords
    electromigration; integrated circuit interconnections; integrated circuit reliability; tantalum; vapour deposited coatings; Cu; Cu interconnects; PVD Ta cap; Ta; activation energy; conventional barrier/seed process; electromigration performance enhancement; Atherosclerosis; CMOS process; CMOS technology; Chemicals; Dielectrics; Electromigration; Electrons; Fabrication; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315422
  • Filename
    1315422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3212957