Reliability investigations on a unique direct-tunneling-induced high performance partially-depleted SOI PMOS device

Author

Chen, Shiao-Shien ; Huang-Lu, Shiang ; Tang, Tien-Hao ; Shiau, Wei-Tsun

Author_Institution

Device Eng. Dept, United Microelectron. Corp., Hsin-Chu, Taiwan

fYear

2004

fDate

25-29 April 2004

Firstpage

679

Lastpage

680

Abstract

This paper investigates reliability of a unique direct-tunneling-induced high performance partially-depleted (PD) SOI PMOS device. For the ultra-thin gate-oxide PD SOI PMOS devices, owing to the application of the converse n⁺ poly-gate, the direct-tunneling mechanism can be applied to raise the floating-body potential and suppress the undesired floating-body effect. Therefore, it is important and essential to further investigate the impact of the converse n⁺ poly-gate on the reliability.

Keywords

CMOS integrated circuits; dielectric thin films; integrated circuit reliability; silicon-on-insulator; tunnelling; direct-tunneling mechanism; direct-tunneling-induced high performance partially-depleted SOI PMOS device; floating-body effect; floating-body potential; reliability investigations; ultra-thin gate-oxide; Degradation; Electrostatic discharge; MOS devices; MOSFET circuits; Niobium compounds; Reliability engineering; Silicon on insulator technology; Stress; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315448

Filename

1315448