DocumentCode
3214085
Title
Compact Models for the I-V Characteristics of Double Gate and Surround Gate MOSFETs
Author
Morris, H. ; Cumberbatch, E. ; Abebe, H. ; Tyree, V.
Author_Institution
San Jose State Univ., San Jose
fYear
2006
fDate
25-28 June 2006
Firstpage
119
Lastpage
123
Abstract
The models presented by Lu and Taur, for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function. These solutions are shown to be accurate compared with exact numerical solutions.
Keywords
MOSFET; numerical analysis; semiconductor device models; I-V characteristics; Lambert function; double gate MOSFET; surround gate MOSFET; transcendental equation; Algorithm design and analysis; Difference equations; Geometry; Low voltage; MOSFETs; SPICE; Semiconductor device modeling; Tunneling; Analytic solutions; compact model; double gate MOSFETs; surround gate MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location
San Jose, CA
ISSN
0749-6877
Print_ISBN
1-4244-0267-0
Type
conf
DOI
10.1109/UGIM.2006.4286365
Filename
4286365
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