Pulsed power diagnostics for power IGBTS

Author

VanGordon, J.A. ; Kovaleski, S.D. ; Dale, G.E.

Author_Institution

Univ. of Missouri, Columbia, MO, USA

fYear

2009

fDate

1-5 June 2009

Firstpage

1

Lastpage

1

Abstract

The power insulated gate bipolar transistor (IGBT) is used in many applications. This paper presents an analysis of diagnostics capable of being used in the characterization of IGBTs under pulsed power conditions. Specifically, signals of up to 4.5 kV and 1 kA with approximately a 5??s pulse width will be applied to a given IGBT. The diagnostic probes presented provide an effective means of measurement while protecting the sensitive test bench equipment. Measurements such as the maximum collector current and maximum collector-emitter voltage are presented for the Powerex QIS4506001 IGBT to demonstrate the effectiveness of these diagnostic probes.

Keywords

insulated gate bipolar transistors; power bipolar transistors; pulsed power technology; insulated gate bipolar transistor; power IGBT; pulsed power diagnostics probe; sensitive test bench equipment; Current measurement; Insulated gate bipolar transistors; Laboratories; Power electronics; Probes; Protection; Space vector pulse width modulation; Testing; USA Councils; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on

Conference_Location

San Diego, CA

ISSN

0730-9244

Print_ISBN

978-1-4244-2617-1

Type

conf

DOI

10.1109/PLASMA.2009.5227442

Filename

5227442