DocumentCode
3214516
Title
Simulation and analysis of quantum dot laser based on tunneling injection
Author
Hashtroodi, M. ; Rostami, A. ; Ghazisaeedi, N.
Author_Institution
Dept. of Electr. Eng., Islamic Azad Univ. of Tabriz, Tabriz, Iran
fYear
2012
fDate
15-17 May 2012
Firstpage
1252
Lastpage
1257
Abstract
In this paper we propose a new circuit model for a tunneling injection quantum dot lasers (TI-QDL). The detail of our model is based on independent rate equations. The carrier density, optical modes and their powers are described independently. The proposed equivalent circuit is simulated by a Pspice and the results are compared with a model that the rate equations are solved numerically.
Keywords
SPICE; equivalent circuits; laser modes; quantum dot lasers; tunnelling; Pspice; carrier density; equivalent circuit; optical modes; quantum dot laser; rate equations; tunneling injection; Integrated circuit modeling; Length measurement; Nanoscale devices; Radiative recombination; Surface emitting lasers; ES; GS; QD-TI lasers; tunneling effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4673-1149-6
Type
conf
DOI
10.1109/IranianCEE.2012.6292548
Filename
6292548
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