RF enhanced PECVD system for CNT field-emitter cathode array deposition

Summary form only given. We present the development of a plasma-enhanced chemical vapor deposition (PECVD) system for deposition of multi-walled, vertically aligned Carbon Nano-Tubes (CNT) as cathode field emitter sites in a large (1000 x 1000), 1 cm² area array. The CNT deposition is compatible with the use of Si wafers containing the individual emitter site ballasts in the form of Si n-type JFETs and series source resistors. In earlier attempts to deposit CNTs in the PECVD system using only DC power for combined plasma, heat, and bias E-field generation severe arcing was observed which frustrated the yield. By adding modest amounts of RF power to the system the bias generation and heating is decoupled from the plasma generation, CNT growth temperatures can be lowered and the arcing on the insulator surfaces of the Si wafer is significantly reduced. Initial results from the deposition system will be presented together with the measured CNT field-emission I-V characteristics.