DocumentCode
3215795
Title
Research on technology of strongly pinching diodes
Author
Yang, H.L.
Author_Institution
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
fYear
2009
fDate
1-5 June 2009
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Structures of several types of strongly pinching diodes were introduced. The theory, pinching mechanics, and factors which influence the diodes´ characteristics were analyzed. The latest development of research on pinching focusing diodes was introduced. The merits, defects and limitation of different types of diodes were compared and analyzed. The pinching mechanics of rod-pinch diodes which were developed in the latest years was emphasized. The numerical simulation results obtained using PIC code was presented. The structure parameters of rod-pinch diode with which stable spots could be obtained and the diode was appropriate for relatively low voltage were presented. Experimental researches were carried out on FLASH II and 2MV pulsed power drivers. The X-ray dose at lm from the diode in the forward direction was about 20~30mGy. The spot diameter was about 1mm, the maximum energy was 1.8MeV.
Keywords
pinch effect; plasma diodes; plasma simulation; PIC code; pinching diodes; pulsed power drivers; rod-pinch diodes; Diodes; Low voltage; Numerical simulation; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
Conference_Location
San Diego, CA
ISSN
0730-9244
Print_ISBN
978-1-4244-2617-1
Type
conf
DOI
10.1109/PLASMA.2009.5227520
Filename
5227520
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