DocumentCode
3218881
Title
Trimming Epitaxial GaAs Schottky-diode Parameters Via Anodic Oxidation
Author
Siegel, Clifford M. ; Mattauch, Robert J.
Author_Institution
University Of Virginia
fYear
1981
fDate
5-8 April 1981
Firstpage
392
Lastpage
394
Keywords
Capacitance; Charge carrier density; Epitaxial layers; Frequency; Gallium arsenide; Laboratories; Local oscillators; Oxidation; Schottky diodes; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '81. Conference Proceedings
Conference_Location
Huntsville, AL, USA
Type
conf
DOI
10.1109/SECON.1981.673472
Filename
673472
Link To Document