Electromigration study on Cu-Sn interconnections

Author

Lee, Tae-Kyu ; Hua, Fay ; Morris, J.W., Jr.

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA

fYear

2005

fDate

16-18 March 2005

Firstpage

60

Lastpage

62

Abstract

This research concerns the influence of electron current on the diffusion of Sn and Cu in simple Cu-Sn and Cu-Sn-Cu diffusion couples. The diffusion couples are designed to permit in situ studies of the progress of diffusion. Initial tests were done in 60°C air with a current density of 1 × 10⁴A/cm². The results showed Cu movement into Sn in the direction of the electron current. With accompanying grain boundary sliding of the Sn grains. There is also evidence for Sn flow in the direction opposite the electron current.

Keywords

copper alloys; current density; electromigration; integrated circuit interconnections; slip; tin alloys; 60 C; Cu-Sn interconnection; Cu-Sn-Cu; Sn flow; Sn grains; current density; diffusion couples; electromigration; electron current; grain boundary sliding; Current density; Electromigration; Grain boundaries; Heating; Optical microscopy; Scanning electron microscopy; Soldering; Temperature; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Proceedings. International Symposium on

ISSN

1550-5723

Print_ISBN

0-7803-9085-7

Electronic_ISBN

1550-5723

Type

conf

DOI

10.1109/ISAPM.2005.1432046

Filename

1432046