• DocumentCode
    3220081
  • Title

    Surface-conduction electron emission from W-Mo-Si thin film

  • Author

    Lu Liu ; Siliang Xiong ; Lingguo Zhao ; Shengli Wu

  • Author_Institution
    Key Lab. for Phys. Electron. & Devices of the Minist. of Educ., Xi´an Jiaotong Univ., Xi´an, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    190
  • Lastpage
    192
  • Abstract
    This investigation proposes to deposit a ternary material W-Mo-Si as the conductive films for surface-conduction electron emitters. The components of this ternary film can be controlled by changing the sputtering targets and adjusting the sputtering power of the different targets. This study mainly analyses the electron emission of the co-sputtering using a W-Mo-Si target and Mo target. The micro-analysis about the W-Mo-Si film structure after the electro-forming process is carried out with SEM. Results show that there are many anomalous nanoparticles, electrons can tunnel between the nanoparticles and then be attracted by the anode voltage as the emission current.
  • Keywords
    electroforming; electron emission; molybdenum; silicon; sputter deposition; surface conductivity; thin films; tungsten; work function; SEM; W-Mo-Si; W-Mo-Si film structure; anode voltage; anomalous nanoparticles; conductive films; cosputtering; electroforming process; electron tunneling; emission current; micro-analysis; sputtering power; sputtering targets; surface-conduction electron emission; ternary material; thin film; work function; Cathodes; Films; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644392
  • Filename
    5644392