DocumentCode
3220081
Title
Surface-conduction electron emission from W-Mo-Si thin film
Author
Lu Liu ; Siliang Xiong ; Lingguo Zhao ; Shengli Wu
Author_Institution
Key Lab. for Phys. Electron. & Devices of the Minist. of Educ., Xi´an Jiaotong Univ., Xi´an, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
190
Lastpage
192
Abstract
This investigation proposes to deposit a ternary material W-Mo-Si as the conductive films for surface-conduction electron emitters. The components of this ternary film can be controlled by changing the sputtering targets and adjusting the sputtering power of the different targets. This study mainly analyses the electron emission of the co-sputtering using a W-Mo-Si target and Mo target. The micro-analysis about the W-Mo-Si film structure after the electro-forming process is carried out with SEM. Results show that there are many anomalous nanoparticles, electrons can tunnel between the nanoparticles and then be attracted by the anode voltage as the emission current.
Keywords
electroforming; electron emission; molybdenum; silicon; sputter deposition; surface conductivity; thin films; tungsten; work function; SEM; W-Mo-Si; W-Mo-Si film structure; anode voltage; anomalous nanoparticles; conductive films; cosputtering; electroforming process; electron tunneling; emission current; micro-analysis; sputtering power; sputtering targets; surface-conduction electron emission; ternary material; thin film; work function; Cathodes; Films; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644392
Filename
5644392
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