• DocumentCode
    32203
  • Title

    Capture Cross Section of Traps Causing Random Telegraph Noise in Gate-Induced Drain Leakage Current

  • Author

    Sung-Won Yoo ; Younghwan Son ; Hyungcheol Shin

  • Author_Institution
    Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
  • Volume
    60
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    1268
  • Lastpage
    1271
  • Abstract
    In this brief, we investigated random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a MOSFET. Using the resulting RTN measurement data, the capture cross section (σc) of the trap was extracted, and a more accurate σc model was introduced. The bias dependence of σc was then analyzed.
  • Keywords
    MOSFET; leakage currents; random noise; GIDL current; MOSFET; RTN measurement data; capture cross-section; gate-induced drain leakage current; random telegraph noise; Current measurement; Electron traps; Lattices; Leakage current; Logic gates; Noise; Capture cross section $(sigma_{c})$; gate-induced drain leakage (GIDL); lattice coordinate configuration; multiphonon emission (MPE); random telegraph noise (RTN);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2239299
  • Filename
    6422373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=32203