• DocumentCode
    3220427
  • Title

    Dielectric study of Al/Ho2O3/Al thin-film sandwiches by means of the time domain current response method

  • Author

    Wiktorczyk, T. ; Nitsch, K. ; Bober, Z.

  • Author_Institution
    Tech. Univ. of Wroclaw, Poland
  • fYear
    1992
  • fDate
    22-25 Jun 1992
  • Firstpage
    87
  • Lastpage
    91
  • Abstract
    The authors present results of dielectric studies of holmium oxide (Ho2O3) thin films sandwiched between aluminum electrodes. The results show that the dielectric response of Al/Ho2 O3/Al structures is very similar to that obtained earlier for thin-film capacitors with rare-earth metal oxides (e.g. Dy 2O3, Yb2O3, and Tm2 O3) used as insulators. The dielectric behavior of these structures is connected with volume as well as with interfacial phenomena
  • Keywords
    aluminium; capacitance; holmium compounds; metal-insulator-metal structures; permittivity; thin film capacitors; time-domain analysis; 0.1 mHz to 1 kHz; Al-Ho2O3-Al thin film sandwiches; DC conductivity; MIM structure; capacitance; dielectric response; interfacial phenomena; permittivity; thin film capacitors; time domain current response method; transient currents; volume phenomena; Admittance measurement; Aluminum; Capacitance measurement; Dielectric measurements; Dielectric thin films; Dielectrics and electrical insulation; Frequency domain analysis; Frequency measurement; Impedance measurement; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1992., Proceedings of the 4th International Conference on
  • Conference_Location
    Sestri Levante
  • Print_ISBN
    0-7803-0129-3
  • Type

    conf

  • DOI
    10.1109/ICSD.1992.224966
  • Filename
    224966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3220427