Coulomb interaction effect correction in e-beam block exposure lithography

Author

Takahashi, K. ; Nara, Y. ; Manabe, Y. ; Hoshino, H. ; Machida, Y.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

36

Lastpage

37

Abstract

In e-beam lithography technologies, a blur of an e-beam increases as the e-beam current increases, due to the CIE (Coulomb Interaction Effect). This phenomenon is significant in such writing strategies as block exposure or cell projection e-beam lithography where fine patterns must be delineated with large e-beam current. Resulting problems are resolution degradations and pattern size variations. This paper presents a method to incorporate the CIE into the PEC (Proximity Effect Correction) technique so that the pattern size variations due to CIE are corrected.

Keywords

electron beam lithography; proximity effect (lithography); Coulomb interaction effect correction; Proximity Effect Correction; e-beam block exposure lithography; Current distribution; Degradation; Equations; Gaussian distribution; Gaussian processes; Laboratories; Lithography; Modulation coding; Scattering; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797464

Filename

797464