Fabrication of periodic Si nanocages by lithographic anodization

Author

Baba, T. ; Hashimoto, M. ; Nakagawa, T. ; Koshida, N.

Author_Institution

Tokyo Univ. of Agric. & Technol., Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

120

Lastpage

121

Abstract

It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.

Keywords

anodisation; elemental semiconductors; focused ion beam technology; heavily doped semiconductors; lithography; nanostructured materials; nanotechnology; porous semiconductors; resists; semiconductor growth; silicon; FIB; Ga/sup +/-focused ion beam; MoO/sub 3/; Si; Si nanostructures; WO/sub 3/; controlled anodization; dual-functional refractory metal oxide resists; fabrication; heavily doped n-type Si wafer; lithographic anodization; nanofabrication process; nanometer-scale pores; periodic Si nanocages; Amorphous materials; Anisotropic magnetoresistance; Etching; Fabrication; Nanoporous materials; Nanostructures; Periodic structures; Resists; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797506

Filename

797506