Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation

We have investigated Coulomb blockade phenomena in low-dimensional Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) with the very small length and very narrow width of channel regions, which are fabricated using e-beam lithography, dry etching and focused ion beam (FIB) implantation. Coulomb blockade phenomena have been found in Si nano-wires and narrow channel Si MOSFETs. In our previous study, the conduction mechanism and Coulomb blockade phenomena in one-dimensional p-type Si wires formed by FIB implantation has been reported. In the present study, we have successfully fabricated low-dimensional p-channel Si MOSFETs, whose source/drain regions with a width of 100 nm are formed by selective FIB implantation. Coulomb blockade phenomena and magnetoresistance are examined using the sample, as a function of channel length.