DocumentCode
3221760
Title
Pulsed laser deposition of diamondlike carbon films on gated Si field emitter arrays for improved electron emission
Author
Yavas, O. ; Hashimoto, T. ; Suzuki, N. ; Takai, M. ; Higuchi, Y. ; Kobayashi, M. ; Hosono, A. ; Okuda, S.
Author_Institution
Grad. Sch. of Eng. Sci., Osaka Univ., Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
140
Lastpage
141
Abstract
Pulsed laser deposition of thin DLC films with a thickness of up to 6 nm was observed to increase the emission current and stability from niobium-gated Si field emitter arrays. Thicker films, on the other hand, caused a decrease in emission current.
Keywords
carbon; pulsed laser deposition; thin films; vacuum microelectronics; C-Si; diamondlike carbon films; electron emission; emission current; gated Si field emitter arrays; Carbon dioxide; Diamond-like carbon; Electron emission; Field emitter arrays; Optical arrays; Optical pulses; Pulsed laser deposition; Semiconductor films; Stability; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797516
Filename
797516
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