Monte Carlo modeling of high field carrier transport in bulk InP

Author

You, A.H. ; Ong, D.S.

Author_Institution

Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia

fYear

2000

fDate

2000

Firstpage

168

Lastpage

172

Abstract

A full band Monte Carlo model is developed to simulate high field carrier transport in bulk InP. The realistic energy band structure used in this model is generated from the local empirical pseudopotential method. The simulated steady-state mean drift velocity and mean energy of electrons and holes as a function of electric fields are consistent with previous reported results. In our model, the electron and hole ionization coefficients are fitted to the available experimental data in the electric field range from 400 kV/cm to 900 kV/cm by a `softer´ threshold than the Keldysh model used in other full band Monte Carlo models described in the literature

Keywords

III-V semiconductors; Monte Carlo methods; band structure; electron mobility; high field effects; hole mobility; indium compounds; ionisation; pseudopotential methods; InP; Keldysh model; Monte Carlo modeling; bulk InP; data fitting; electric field range; electric fields; electron ionization coefficient; full band Monte Carlo model; full band Monte Carlo models; high field carrier transport; hole ionization coefficient; local empirical pseudopotential method; mean electron energy; mean hole energy; model energy band structure; simulated steady-state mean drift velocity; soft threshold; Absorption; Charge carrier processes; Electron mobility; Impact ionization; Indium phosphide; Monte Carlo methods; Photodetectors; Photonic band gap; Power engineering and energy; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on

Conference_Location

Guoman Port Dickson Resort

Print_ISBN

0-7803-6430-9

Type

conf

DOI

10.1109/SMELEC.2000.932457

Filename

932457