Evaluation of Stress-Induced Effects in Electronic Characteristics of nMOSFETs

Author

Koganemaru, Masaaki ; Ikeda, Toiru ; Miyazaki, Noriyuki ; Tomokage, Hajime

Author_Institution

Mech. & Electron. Res. Inst., Fukuoka Ind. Technol. Center, Kitakyushu

Volume

2

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

1174

Lastpage

1181

Abstract

Stress-induced shifts in the DC characteristics of nMOSFETs were investigated experimentally by the 4-point bending method. We measured the device shape dependence and load direction dependence of the DC characteristic shifts. We also carried out drift-diffusion device simulation in order to evaluate the experimental results. The simulation model includes the electron mobility model that takes the stress effects into consideration. The conduction band energy change induced by the shear deformation of silicon is considered in the mobility model. The experimental results were evaluated reasonably using the proposed mobility model

Keywords

MOSFET; electron mobility; semiconductor device models; stress effects; 4-point bending method; DC characteristic shifts; conduction band energy change; device shape dependence; drift-diffusion device simulation; electron mobility model; electronic characteristics; load direction dependence; nMOSFET; shear deformation; stress-induced effects; Deformable models; Electron mobility; Electronic packaging thermal management; Industrial electronics; MOSFETs; Residual stresses; Shape measurement; Silicon; Thermal stresses; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Systemintegration Technology Conference, 2006. 1st

Conference_Location

Dresden

Print_ISBN

1-4244-0552-1

Electronic_ISBN

1-4244-0553-x

Type

conf

DOI

10.1109/ESTC.2006.280158

Filename

4060883