DocumentCode
3223669
Title
A semi numerical approach for semiconductor devices physical modeling
Author
Dehmas, M. ; Azrar, A. ; Recioui, A. ; Challal, M.
Author_Institution
Dgee / Fsi, Univ. of Boumerdes, Boumerdes, Algeria
fYear
2009
fDate
15-17 July 2009
Firstpage
146
Lastpage
150
Abstract
In this work, the developed mathematical extension of the semi analytical method of lines (MoL) for the solution of Poisson´s equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode.
Keywords
MOS capacitors; Poisson equation; method of lines; semiconductor device models; voltage distribution; MOS capacitor; Poisson equation; deep depletion mode; electrodes configuration; geometry; mathematical extension; semianalytical method of lines; semiconductor devices physical modeling; seminumerical approach; voltage distribution; Differential equations; Electrodes; Geometry; MOS capacitors; Mathematical model; Poisson equations; Semiconductor devices; Semiconductor impurities; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Computational Tools for Engineering Applications, 2009. ACTEA '09. International Conference on
Conference_Location
Zouk Mosbeh
Print_ISBN
978-1-4244-3833-4
Electronic_ISBN
978-1-4244-3834-1
Type
conf
DOI
10.1109/ACTEA.2009.5227928
Filename
5227928
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