DocumentCode
3223697
Title
Transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction
Author
Liu, Hongxia ; Zhang, Heming ; Song, Jiuxu
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
136
Lastpage
139
Abstract
Nanotube heterojunction has a good application prospect in nanoelectronic devices. The transport properties of the heterojunction are the foundation of its simulation and design. In this paper, the transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction were investigated and negative differential resistance (NDR) property was discovered. The origin of the NDR is the fluctuation of the transmission coefficient caused by the variation of the applied bias voltage.
Keywords
carbon nanotubes; nanoelectronics; silicon compounds; wide band gap semiconductors; SiC; nanoelectronic devices; nanotube heterojunction; negative differential resistance; transport properties; Atomic layer deposition; Carbon nanotubes; Electrodes; Gold; Green´s function methods; Heterojunctions; Nanoscale devices; Nanostructured materials; Scattering; Silicon carbide; nanotube hetero -junction; nonequilibrium Green´s functions; transport properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394170
Filename
5394170
Link To Document