DocumentCode
3224562
Title
SET and RESET state resistance modeling of phase change memory
Author
Kwong, K.C. ; He, Frank ; Chan, Mansun
Author_Institution
Dept. of Comput. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
461
Lastpage
464
Abstract
An empirical model for calculating the SET and RESET state resistance of phase change memory (PCM) is developed base on a resistor network method. The model has been extensively compared with numerical simulations with good accuracy. The model can be directly implemented into SPICE for simulating circuits with PCM elements.
Keywords
electric resistance; phase change memories; RESET state resistance modeling; phase change memory; resistor network method; Amorphous materials; Circuit simulation; Crystallization; Electrodes; Helium; Nonvolatile memory; Phase change materials; Phase change memory; Resistors; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394216
Filename
5394216
Link To Document