Fabrication of high compressive stress silicon nitride membrane in strained silicon technology

Author

Bin Shu ; Zhang, Heming ; Xuan, Rongxi ; Dai, Xianying ; Hu, Huiyong ; Song, Jianjun ; Liang, Liang ; Cui, Jianan

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

365

Lastpage

367

Abstract

The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silicon nitride membrane has been fabricated on the optimization of the process parameters, and the compressive stress is up to -1.08 GPa. Finally, the method of further improving the compressive stress in silicon nitride membrane is put forward.

Keywords

compressive strength; elemental semiconductors; plasma CVD coatings; silicon compounds; PECVD equipment; SiN; compressive stress; silicon nitride; strained silicon technology; Atomic layer deposition; Biomembranes; Compressive stress; Fabrication; Frequency; Hydrogen; Nitrogen; Silicon; Tensile stress; Thermal stresses; compressive stress; silicon nitride; strained Si;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394243

Filename

5394243